sot-89-3l 1. base 2. collector 3. emitter sot-89-3l plastic-encapsulate transistors A42 transistor (npn) features z low collector-emitter saturation voltage z high breakdown voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 310 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 305 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v i cbo v cb =200v,i e =0 0.25 a v ce =200v,i b =0 0.25 a collector cut-off current i ceo v ce =300v,i b =0 5 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =10v, i c =1ma 60 h fe(2) v ce =10v, i c =10ma 10 0 30 0 dc current gain h fe(3) v ce =10v, i c =30ma 75 collector-emitter saturation voltage v ce(sat) i c =20ma,i b =2ma 0.2 v base-emitter saturation voltage v be(sat) i c =20ma,i b =2ma 0.9 v transition frequency f t v ce =20v,i c =10ma, f=30mhz 50 mhz symbol parameter value unit v cbo collector-base voltage 310 v v ceo collector-emitter voltage 305 v v ebo emitter-base voltage 5 v i c collector current -continuous 200 ma i cm collector current -pulsed 500 ma p c collector power dissipation 5 0 0 mw r ja thermal resistance from junction to ambient 2 5 0 /w t j junction temperature 150 t stg s torage temperatu re -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,apr,2013
0 300 600 900 1200 0.1 1 10 100 0.1 1 10 100 10 100 0.1 1 10 100 300 600 900 0 25 50 75 100 125 150 0 100 200 300 400 500 600 0.1 1 10 100 10 100 0.1 1 10 100 10 100 1000 0.1 1 10 1 10 100 0246810121416182022 0 2 4 6 8 10 12 14 16 18 common emitter v ce =10v v be i c ?? base-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 0 0 i c f t ?? common emitter v ce =20v t a =25 collector current i c (ma) transition frequency f t (mhz) 300 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 200 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 500 A42 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce =10v c ib f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob reverse voltage v (v) capacitance c (pf) 20 common emitter t a =25 90ua i b =10ua collector current i c (ma) collector-emitter voltage v ce (v) i c ?? v ce 20ua 30ua 40ua 50ua 60ua 70ua 80ua 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,apr,2013
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